Nonlinear interaction studies of flexoelectricity and electron transport around nano-cracks in semiconductors
At the tip of nano-cracks, large strain gradients and strong flexoelectric effect would be produced with resulting in the local electrons redistribution in semiconductors. This novel multiple physical coupling phenomenon is named as the flexoelectric emiconductor effect. Meanwhile, the electrons redistribution could conversely affect the flexoelectric effect around the crack tip and change the semiconductor performance. To study the coupling of flexoelectricity and electrons transport around nano-cracks in semiconductors, a nonlinear collocation mixed finite element method (CMFEM) is
proposed here on the basis of the linear CMFEM by taking the nonlinear electrons drift into account additionally. The nonlinear coupling of flexoelectricity and electrons transport truly occurs around the crack tip in semiconductors, and plays an important role on the electrons transport at the tip of nano-cracks especially for the longer crack.
